Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs
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چکیده
We propose a novel spin-torque oscillator based on two MgO-MTJs with a shared free layer. By performing extensive micromagnetic modeling we found that the structure exhibits a wide tunability of oscillation frequencies from a few GHz to several ten GHz.
منابع مشابه
Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling
New types of spintronics devices utilizing all-electrical magnetization manipulation by current, such as spin-torque transfer RAM and spin-torque oscillators, have been developed based on MgO magnetic tunnel junctions (MTJs) [1]. Spin-torque oscillators based on MTJs with in-plane magnetization [2] show high frequency capabilities, but still need an external magnetic field and are characterized...
متن کاملGeometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer
New types of spintronics devices utilizing all-electrical magnetization manipulation by current, such as spin-torque transfer RAM and spin-torque oscillators, have been developed based on MgO magnetic tunnel junctions (MTJs) with a large magneto-resistance ratio [1]. Spin-torque oscillators based on a single MTJ with in-plane magnetization [2] show high frequency capabilities, but still need an...
متن کاملEfficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer
We present a novel spin-torque oscillator based on two three-layer MgO-MTJs with a shared free layer. By performing extensive micromagnetic simulations we found that the structure exhibits a wide tunability of oscillation frequencies from a few GHz to several tens of GHz. We discuss the optimization of such structures in order to obtain the maximum output power. Keywords—spin-torque; oscillator...
متن کاملMicromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer
Spin-torque oscillators based on a single MTJ with in-plane magnetization exhibit high frequency capabilities, but still need an external biasing magnetic field and are characterized by low output power level [1]. Oscillators on MTJs with perpendicular magnetization and vortex-based oscillators are shown to generate oscillations without an external magnetic field, however, their low operating f...
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Nano-scale patterned techniques, DCpulsed-current-driven magnetization switching and spin-dependent transport properties of magnetic tunnel junctions (MTJs) are presented in this paper. The experiments show that the spin transfer torque (STT) plays a main switching role in the magnetization current switching and the current-induced circular magnetic field plays an assisted-switching role in the...
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تاریخ انتشار 2013